Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky junctions /
Recently high temperature dependence was obtained in Ag/n-Si and Al/p-Si Schottky junctions prepard by ionised cluster beam deposition and by plasma immersion implantation, respectively. In this work it is shown by experiments that this feature was due to the poor quality of backside ohmic contacts.
Shranjeno v:
Main Authors: | , , , , , , , , , |
---|---|
Format: | Book Chapter |
Jezik: | English |
Teme: | |
Sorodne knjige/članki: | Vsebovano v:
Vacuum |
Oznake: |
Označite
Brez oznak, prvi označite!
|
Vzdrževanje sistema
Trenutno vzdržujemo knjižnični informacijski sistem.
Informacije o zalogi so trenutno nedostopne. Opravičujemo se za nevšečnosti in vas prosimo da nas ponovno kontaktirate: