Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky junctions /

Recently high temperature dependence was obtained in Ag/n-Si and Al/p-Si Schottky junctions prepard by ionised cluster beam deposition and by plasma immersion implantation, respectively. In this work it is shown by experiments that this feature was due to the poor quality of backside ohmic contacts.

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Bibliografske podrobnosti
Main Authors: Hrováth, Zs. J. (Author), Ádám, M. (Author), Pintér, I. (Author), Cvikl, Bruno. (Author), Korošak, Dean. (Author), Mrdjen, T. (Author), Van Tuyen, V. (Author), Makaró, Zs. (Author), Dücsö, Cs. (Author), Bársony, I. (Author)
Format: Book Chapter
Jezik:English
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Sorodne knjige/članki:Vsebovano v: Vacuum
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