Comparative study of I-IV characteristics of the ICB deposited Ag/n-Si(111) and Ag/p-Si(100) Schottky junctions /
The room temperature I-U characteristics of the ionized cluster beam, ICB, deposited Ag/n-Si(111) and Ag/p-Si(100) Schottky barrier junctions, for non zero Ag ions acceleration voltage U▫$_a$▫> 0V, have been investigated. The effective Schottky barrier height (SBH) is observed to decrease if Ag i...
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| Jezik: | English |
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| LEADER | 02712naa a2200205 ib4500 | ||
|---|---|---|---|
| 001 | 3876118 | ||
| 003 | SI-MaCOB | ||
| 005 | 20001201000000.0 | ||
| 008 | 980904s1998 xxk|||||||||||||| ||eng c | ||
| 040 | |a KTFMB |b slv |c SI-MaIIZ |d KTFMB |e ppiak | ||
| 080 | |a 539.2 | ||
| 100 | 1 | |a Cvikl, Bruno. |4 aut | |
| 245 | 0 | 0 | |a Comparative study of I-IV characteristics of the ICB deposited Ag/n-Si(111) and Ag/p-Si(100) Schottky junctions / |c B. Cvikl, D. Korošak and Zs.J. Horváth. |
| 300 | |a str. 385-393. | ||
| 520 | |a The room temperature I-U characteristics of the ionized cluster beam, ICB, deposited Ag/n-Si(111) and Ag/p-Si(100) Schottky barrier junctions, for non zero Ag ions acceleration voltage U▫$_a$▫> 0V, have been investigated. The effective Schottky barrier height (SBH) is observed to decrease if Ag is deposited on n-doped Si substrate, but for Ag/p-Si junctions shows an incrase,relatively to the corresponding SBH values of U▫$_a$▫ = 0 V ICB deposited junctions, respectively. The accelerated Ag metal ions, an essentialcharacteristic of the ICB deposition method, may for an appopriate value of U▫$_a$▫ penetrate the Si wafer a few nm in depth and consequently might strongly contribute to an additional doping density within this - Ag enriched - region. For the penetration length L of the order of a few lattie lengths the penetrating energetic Ag ions are producing, befoe embeded within the substrate, some lattice structural damages what effectively results in the fact that the Ag enriched silicon region may approximately be considered as the specific case of the disordered interface control layer, ICL. The modification of the Ag/Si energy bands due to the existence of this ICL in conjunction with the assmed DIGS electron charge density, occuring in the presumably abrupt plane between the Ag enriched region and the rest of the bulk Si substrate, has been calculated. On the basis of the obtained results, a tentative suggestion is advanced according to which the semiconductor local energy band modification (ocurring as the simultaneous result of actoivated Ag deep impurity levels in the Si wafer and the appearance of localized charges due to DIGS) is to largest degee responsible for an effective unpinning of the semiconductor Fermi level including, in such a way, the modulation of the Schottky barrier height. | ||
| 653 | 0 | |a fizika |a vakuumska tehnika |a tanke plasti |a nanos |a curek ioniziranih skupkov |a ICB | |
| 653 | 0 | |a physics |a vacuum techniques |a deposition |a thin layers |a ionised cluster beam |a ICB | |
| 700 | 1 | 2 | |a Korošak, Dean. |4 aut |
| 700 | 1 | 2 | |a Horváth, Zs.J. |4 aut |
| 773 | 0 | |t Vacuum |b [Print ed.] |d Oxford ; New York : Pergamon Press, 1951- |x 0042-207X |g 50, št. 3/4 (1998), str. 385-393 | |